shantou huashan electronic devices co.,ltd . applications switching circuit interface circuit . absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage -50 v i c =-50 a, i e =0 bv ceo collector-emitter breakdown voltage -50 v i c =-1ma, i b =0 bv ebo emitter-base breakdown voltage -5 v i e =-50 a i c =0 i cbo collector cut-off current -0.5 a v cb =-50v, i e =0 i ebo emitter cut-off current -0.5 a v eb =-4v, i c =0 h fe dc current gain 100 250 600 v ce =-5v, i c =-1ma v ce(sat) collector- emitter saturation voltage -0.3 v i c =-10ma, i b =-1ma v i off input off voltage -0.4 -0.55 -0.8 v v ce =-5v, i c =-0.1ma v i on input on voltage -0.7 -1.2 -3.0 v v ce =-0.2v, i c =-10ma r1 input resistor 7.0 10 13 k f t current gain-bandwidth product 250 mhz v ce =-10v, i c =-5ma cob output capacitance 3.7 pf v cb =-10v, f=1 mhz t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation 300mw v cbo collector-base voltage -50v v ceo collector-emitter voltage -50v v ebo emitter-base voltage -5v i c collector current -100ma 1 D emitter e 2 D collector c 3 D base b to-92s HA114T pnp digital transistor
shantou huashan electronic devices co.,ltd . HA114T fig1. dc current gain fig2. collector-emitter saturation voltage
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